to-126 plastic-encapsulate transistors 2sd669 2sd669a transistor (npn) features low f requency p ower a mplifier c omplementary p air with 2sb649/a maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c =1ma, i e =0 180 v collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 2ds669 2sd669a 120 160 v emitter-base breakdown voltage v (br)ebo i e =1ma, i c =0 5 v collector cut-off current i cbo v cb =160v, i e =0 10 a emitter cut-off current i ebo v eb =4v, i c =0 10 a h fe(1) v ce =5v, i c =150ma 2sd669 2sd669a 60 60 320 200 dc current gain h fe(2) v ce =5v, i c =500ma 30 collector-emitter saturation voltage v ce(sat) i c =500ma, i b =50ma 1 v base-emitter voltage v be v ce =5v, i c =150ma 1.5 v transition frequency f t v ce =5v, i c =150ma 140 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 14 pf classification of h fe(1) rank b c d range 2sd669 60-120 100-200 160-320 2sd669a 60-120 100-200 symbol parameter value unit v cbo collector- base voltage 180 v v ceo collector-emitter voltage 2sd669 2sd669a 120 160 v v ebo emitter-base voltage 5 v i c collector current -continuous 1.5 a p c collector dissipation 1 w t j junction temperature 150 t stg storage temperature -55-150 to-126 1. emitter 2. collector 3. base 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2014
0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1000 200 400 600 800 1000 1200 1 10 100 1000 10 100 1000 0.1 1 10 100 10 100 1000 200 400 600 800 1000 1 10 100 1000 10 100 1000 10 100 0123456 0.00 0.06 0.12 0.18 0.24 0.30 0.36 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (w) =10 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 500 1500 1500 2sd669 / 2sd669a 1500 t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 5v capacitance c t (pf) collector-base voltage v (v) c ob /c ib ?? v cb /v eb f=1mhz i e =0/i c =0 t a =25 c ob c ib collector current i c (ma) base-emmiter voltage v be (mv) i c ?? v be t a = 2 5 t a = 1 0 0 common emitter v ce =5v 1500 =10 t a = 1 0 0 t a = 2 5 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector current i c (ma) i c h fe ?? static characteristic common emitter t a =25 collector current i c (a) collector-emitter voltage v ce (v) 2.0ma 1.8ma 1.6ma 1.4ma 1.2ma 1.0ma 0.4ma 0.6ma 0.8ma i b =0.2ma 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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